Addressing Multiphysics Challenges in 7nm FinFET Designs

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Variability has become the new enemy in 7nm FinFET designs. You can’t fix what you can’t find, and variability takes many forms (e.g., voltage drop, temperature, process). Increased cross-coupling of various multiphysics effects such as timing, power and thermal in 7nm designs poses significant challenges for design closure. Traditional solutions using margin-based methodologies are inadequate. Increased variability makes it hard to predict true silicon behavior and impacts both time-to- result (TTR) and time-to-market (TTM) goals in complex design projects.

View this on-demand webinar to learn how ANSYS multiphysics simulations can address the different forms of variability and their impact on performance. With an understanding of the true limits of built-in margins, you can achieve the target maximum frequency on silicon, while drastically improving the functional yield of your chips.

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