Addressing Multiphysics Challenges in 7nm FinFET Designs
Variability has become the new enemy in 7nm FinFET designs. You can’t fix what you can’t find, and variability takes many forms (e.g., voltage drop, temperature, process). Increased cross-coupling of various multiphysics effects such as timing, power and thermal in 7nm designs poses significant challenges for design closure. Traditional solutions using margin-based methodologies are inadequate. Increased variability makes it hard to predict true silicon behavior and impacts both time-to- result (TTR) and time-to-market (TTM) goals in complex design projects.
View this on-demand webinar to learn how Ansys multiphysics simulations can address the different forms of variability and their impact on performance. With an understanding of the true limits of built-in margins, you can achieve the target maximum frequency on silicon, while drastically improving the functional yield of your chips.