FEA Modeling of a Wafer Level Seam Sealing Approach for MEMS Packaging
A wafer level seam sealing process using resistive heating method is proposed in this paper. Using this method, microelectromechanical (MEMS) devices can be capped and protected at wafer level before other post packaging processes are performed. The sealing process can be done by localized resistive heating at the contact areas between heating electrodes and the edges of the lid cover. A 3-D finite element analysis (FEA) model was created to simulate the thermo-electric behavior of the proposed approach. Temperature and electrical potential distributions were calculated using FEA. The simulation results indicated that this method would provide a feasible solution for wafer level hermetic seam sealing for packaging MEMS using locally heated eutectic bonding or soldering techniques. During the entire sealing processes, MEMS devices will remain at the room temperature. Thus, thermal effect on MEMS devices from heating sources can be minimized.